PART |
Description |
Maker |
KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM48V8100B |
8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8浣?CMOS ?ㄦ?RAM(甯?揩??〉妯″?))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
V53C8125H V53C8125H30 V53C8125H35 V53C8125H40 V53C |
Ultra-high performance 128K x 8bit fast page mode CMOS dynamic RAM ULTRA-HIGH PERFORMANCE, 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高性能28K的乘八快速页面模式的CMOS动态随机存储器 OSC 3.3V SMT 7X5 CMOS 超高性能28K的乘八快速页面模式的CMOS动态随机存储器 ULTRA-HIGH PERFORMANCE/ 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp Mosel Vitelic, Corp. Mosel Vitelic Corp
|
K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output 35ns; 64K x 16 CMOS dynamic RAM with extended data output 40ns; 64K x 16 CMOS dynamic RAM with extended data output 45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output 40ns; 4K x 4 CMOS dynamic RAM with extended data output 50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers G-LINK Technology
|
A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode 50ns 1M x 16bit CMOS dynamic ram with EDO page mode 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
HYB514400BJ-BT60 Q67100-Q749 Q67100-Q750 Q67100-Q7 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 70 ns, PDSO20 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20 RES 121-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
|
SIEMENS AG Siemens Semiconductor G...
|
V53C16129H V53C16129HK60 |
High performance 128K x 16 EDO page mode CMOS dynamic RAM HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic Corp] Mosel Vitelic, Corp
|
GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode 45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
IC41C82052 IC41LV82052 IC41LV82052-60T IC41C82052- |
DYNAMIC RAM, FPM DRAM 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Half-duplex,15-kV ESD, 1/4 UL Transceiver 8-PDIP -40 to 85 200万86兆),充满活力和快速页面模式内
|
ICSI[Integrated Circuit Solution Inc] Omron Electronics, LLC
|